| PART |
Description |
Maker |
| 3VD395650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD186700YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD324500YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD212600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD393600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 2220GC103KAZ1A 1808AA105JAZ1A 1808GC223JAZ1A 1808H |
CAP 0.01UF 2000V 10% X7R SMD-2220 TR-7 FLEXITERM CAPACITOR, CERAMIC, MULTILAYER, 2000 V, X7R, 0.01 uF, SURFACE MOUNT, 2220
High Voltage MLC Chips FLEXITERM
High Voltage MLC Chips FLEXITERM
|
AVX, Corp.
AVX Corporation
|
| 1808GA105JA11A 0805GA105JA11A 1808GA105JA13A 0805G |
High Voltage MLC Chips For 600V to 5000V Applications
High Voltage MLC Chips For 600V to 5000V Applications
For 600V to 5000V Applications
|
AVX Corporation
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| HCHP CHP |
High Stability Resistor Chips
|
Vishay Intertechnology
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KPA1750 |
Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance
|
TY Semiconductor Co., Ltd
|
