| PART |
Description |
Maker |
| NCP51200 |
3 Amp Source / Sink VTT Termination Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
| HYMD116M725BL8-H HYMD116M725BL8-J HYMD116M725BL8-K |
Unbuffered DDR SDRAM SO-DIMM
16Mx72|2.5V|J/M/K/H/L|x9|DDR SDRAM - SO DIMM 128MB 16Mx72 | 2.5V的|焦九龙/升| X9热卖| DDR SDRAM内存- 128MB的内存苏
|
Hynix Semiconductor
http://
Atmel, Corp.
|
| HY5DU12822DTP-D43 HY5DU12822DLTP-D43 HY5DU12822DLT |
32M X 16 DDR DRAM, 0.75 ns, PDSO66
64M X 8 DDR DRAM, 0.75 ns, PDSO66
512Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
| MT18VDDF12872HY-335XX MT18VDDF12872HG-265 MT18VDDF |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
DDR SDRAM SODIMM
|
Micron Technology
|
| HYMD216M646C6-H HYMD216M646C6-J HYMD216M646C6-K HY |
Unbuffered DDR SO-DIMM
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
| K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/ |
128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格
RESISTOR, 2M OHM, 0.063W, 1%
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
