PART |
Description |
Maker |
TGF2955 |
40 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
HMC999 |
GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz
|
Hittite Microwave Corporation
|
1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies UHV240-KH/AS PTSA 0.5/ 9-2.5-Z Discrete POWER & Signal Technologies 分立功率 1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器(功500瓦的瞬变电压抑制器) 1500 Watt Transient Voltage Suppressors(???500???????靛?????? Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp. http://
|
SLD-3091FZ |
30 Watt Discrete LDMOS FET in Ceramic Flanged Package
|
sirenza.com SIRENZA[SIRENZA MICRODEVICES]
|
MRF4427 MRF4427R1 MRF4427R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Yageo, Corp. Microsemi Corporation
|
AM42-0054 |
1 Watt / 2 Watt L-Band Power Amplifier 1.435 - 1.525 GHz
|
Tyco Electronics
|
13522-100 13522-102 13522-1R0 13522-R005 13522-R00 |
PRECISION POWER WIREWOUND RESISTORS SILICONE COATED 1/2 WATT TO 50 WATT
|
RCD COMPONENTS INC.
|
MJE800T MJE800 MJE702 MJE703 MJE803 MJE700T MJE700 |
From old datasheet system 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
|
Motorola, Inc. ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
CGH40045 |
45 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|