| PART |
Description |
Maker |
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM
2M x 8 Static RAM
Microwire Serial EEPROM
16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM
512K x 32 Static RAM
|
Atmel, Corp.
|
| CY62147EV18LL-55BVXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor Corp.
|
| CY7C1006D-10VXI |
1-Mbit (256K x 4) Static RAM 256K X 4 STANDARD SRAM, 10 ns, PDSO28
|
Cypress Semiconductor, Corp.
|
| CY7C1041CV33-12ZSXE |
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| CY7C1041CV33-20VC CY7C1041CV33-20ZC CY7C1041CV33-2 |
4-Mbit (256K x 16) Static RAM
|
Cypress
|
| CY7C1010DV33 CY7C1010DV33-10ZSXI |
2-Mbit (256K x 8)Static RAM
|
Cypress Semiconductor
|
| CY7C1034DV33 CY7C1034DV33-8BGXC |
6-Mbit (256K X 24) Static RAM
|
Cypress Semiconductor
|
| CY62147EV30 CY62147EV30LL-45BVI CY62147EV30LL-45BV |
4-Mbit (256K x 16) Static RAM
|
Cypress Semiconductor
|
| CY7C1010DV33-10VXI CY7C1010DV3308 |
2-Mbit (256K x 8) Static RAM
|
Cypress Semiconductor
|
| CY7C1041DV33 CY7C1041DV33-12BVXE CY7C1041DV33-12VX |
4-Mbit (256K x 16) Static RAM
|
Cypress Semiconductor
|
