PART |
Description |
Maker |
SBM52414X SBM52414Z SBM51414G SBM51414N SBM51414Z |
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 中功率比迪光学标准模310纳米发光550纳米接收 Transceiver Components and FTTx solutions - Tx 1310nm/Rx 1550nm, Medium Power
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INFINEON[Infineon Technologies AG]
|
INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器) 3V Fixed Gain. Medium Power Amplifier 3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器)
|
Agilent(Hewlett-Packard)
|
2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) From old datasheet system Medium Power Transistor (-50V, -1A)
|
ROHM
|
2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving Transceiver Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving 中功率比迪光学标准模1310纳米发光,纳米接1310
|
INFINEON[Infineon Technologies AG]
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
DXT2013P5-13 DXT2013P5 DXT2013P5-15 |
100V PNP MEDIUM POWER TRANSISTOR PowerDI垄莽5 100V PNP MEDIUM POWER TRANSISTOR PowerDI庐5 100V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
LMA443 |
31GHz Medium Power Amplifier 31 GHz Medium Power Amplifier
|
FILTRONIC[Filtronic Compound Semiconductors]
|
2SC3420 E000842 |
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
SG2823 SG2823J_DESC SG2823L_DESC SG2823N SG2803J S |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR POWERQUICC II HIP4 REV B From old datasheet system Driver - Medium Current Array
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
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