| PART |
Description |
Maker |
| 2SD2248 E001170 |
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS FOR INDUCTIVE LOAD DRIVE
From old datasheet system
|
Toshiba
|
| PAK-VA |
310 Ivy Glen Court
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 6316 |
Two WE-310 Plugs To RJ45 / RJ48
|
Pomona Electronics
|
| 2N7002PW115 2N7002PW |
60 V, 310 mA N-channel Trench MOSFET
|
NXP Semiconductors N.V.
|
| TC0268A |
SAW Resonator 310 MHz SMD 3.8X3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| 6524 |
WE-310/Double Banana Plug Cable
|
Pomona Electronics
|
| NTZD5110N NTZD5110NT1 NTZD5110NT1G NTZD5110NT5G |
Small Signal MOSFET 60 V, 310 mA, Dual N-Channel with ESD Protection 294 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563
|
ON Semiconductor
|
| KTD1145 |
EPITAXIAL PLANAR NPN TRANSISTOR (RELAY DRIVE/ HAMMER DIRVE/ LAMP DRIVE/ STROBO/DC-DC CONVERTER/ MOTOR DRIVE)
Strobo Flash Transistor
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| NX5322EH-AZ NX5322EK-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX8341_06 NX8341 NX8341TB-AZ NX8341TJ-AZ NX8341TL- |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
