PART |
Description |
Maker |
M36WT8B10ZA6T M36WT8B70ZA6T M36WT864T70ZA6T M36WT8 |
HEATSHRINK BLACK 4IN X 50FT 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多
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STMicroelectronics N.V. 意法半导
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M58WR064HB M58WR064HT M58WR064HT60ZB6E M58WR064HT6 |
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
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Numonyx B.V
|
M58WR064HT70ZB6E M58WR064HT70ZB6F M58WR064HB70ZB6E |
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
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Numonyx B.V
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M29DW641F M29DW641F70N1 M29DW641F70N1E M29DW641F70 |
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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Numonyx B.V
|
M29DW640D70N1T M29DW640D70ZA1E M29DW640D70N6 M29DW |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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ST Microelectronics
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M29DW640D70ZA1 M29DW640D70ZA1F M29DW640D70ZA1E M29 |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory 64兆位兆x8Mb的x16插槽,多行,页,引导块)3V电源快闪记忆
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意法半导 STMicroelectronics N.V.
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M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107 64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
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Numonyx B.V
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M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动3V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双1616分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
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SGS Thomson Microelectronics 意法半导 STMicroelectronics N.V. ST Microelectronics
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M58WR064EB M58WR064ET M58WR064E-ZBT M58WR064ET80ZB |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory HDR P R 4P PW N 1X4 .100TQ BERGSTRIP .100CC SR STRAIGHT
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SGS Thomson Microelectronics ST Microelectronics 意法半导
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M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 |
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储 2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M76DW52003TA90ZT M76DW52003BA M76DW52003BA70ZT M76 |
SPECIALTY MEMORY CIRCUIT, PBGA73 32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M36W432TG-ZAT M36W432BGZA M36W432BG70ZA6T M36W432B |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product 32 MBIT (2MB X16, BOOT BLOCK) FLASH MEMORY AND 4 MBIT (256KB X16) SRAM, MULTIPLE MEMORY PRODUCT
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ST Microelectronics
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