| PART |
Description |
Maker |
| 0899 OH009 |
From old datasheet system
GaAs Hall Devices
|
Matsshita / Panasonic
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
| MBR30150CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBRF30060 MBRF30060R MBRF30080R MBRF300100 MBRF300 |
High Power Schottky Rectifiers - Full Pak Devices
|
America Semiconductor
|
| MBRF12045 MBRF12045R MBRF120100R MBRF12080 MBRF120 |
High Power Schottky Rectifiers - Full Pak Devices
|
America Semiconductor
|
| MBRH24035 MBRH24020 |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
| MS8001 MS8002 MS8003 MS8004 |
GaAs Schottky Diodes
|
Microsemi Corporation
|
|
