PART |
Description |
Maker |
DR65-0001 DR65-0001TR |
Quad driver for GaAs switches and attenuator Quad Driver for GaAs FET Switches and Attenuators 四驱动砷化镓场效应管开关和衰减
|
MA-Com Tyco Electronics 飞思卡尔半导体(中国)有限公司
|
DR65-0008-TR |
Quad Positive Voltage Driver for GaAs FET Switches and Attenuators 四为GaAs场效应管开关和衰减正电压驱
|
TE Connectivity, Ltd. Citizen Finetech Miyota Tyco Electronics
|
CF739 Q62702-F1215 |
From old datasheet system GaAs FET (N-channel dual-gate GaAs MES FET)
|
Siemens Semiconductor G... Siemens Semiconductor Group Infineon SIEMENS AG
|
DR65-01091 |
Single Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
MADR-009151-000DIE MADR-0009151-000DIE MADRCC0006T |
Single Driver for GaAs FET Switches and Attenuators
|
M/A-COM Technology Solutions, Inc.
|
MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
SP26LV431CN-L_TR SP26LV431EN-L SP26LV431 SP26LV431 |
QUAD LINE DRIVER, PDIP16 QUAD LINE DRIVER, PDSO16 ROHS COMPLIANT, MO-012AC, SOIC-16 HIGH SPEED 3.3V QUAD RS-422 DIFFERENTIAL LINE DRIVER
|
Exar, Corp. Exar Corporation
|
FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET GaAs FET & HEMT Chips
|
Eudyna Devices Inc Fujitsu Media Devices Limited
|
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp. NEC[NEC]
|
MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应 2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
NE76184A-T1A NE76184A-SL NE76184A NE76184A-T1 NE76 |
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC] http://
|