| PART |
Description |
Maker |
| TE28F004B3B110 TE28F004B3B90 TE28F004B3T110 TE28F0 |
3 Volt Advanced Boot Block Flash Memory
|
INTEL[Intel Corporation]
|
| 28F320B3 28F008_800B3 28F004_400B3 28F640B3 28F016 |
3 Volt Advanced Boot Block Flash Memory
From old datasheet system
|
Intel
|
| F320C3BD 28F320C3 28F640C3 28F800C3 |
3 Volt Advanced Boot Block Flash Memory
Search --To 28F320C3BD
|
Intel Corporation
|
| 28F320C3 28F800C3 28F640C3 28F160C3 29064509 |
3 Volt Advanced Boot Block Flash Memory
From old datasheet system
|
Intel
|
| BS2F7VZ0194A BS2F7VZ0441 |
(BS2F7VZ0724 / BS2F7VZ0194A) Digital DBS Front-End Units
(BS2F7VZ6460 / BS2F7VZ0441) Digital DBS Front-End Units
|
RF
|
| TA7522F TA7522S EA09629 |
DUAL VOLTAGE COMPARATOR
From old datasheet system
VOLT COMPARATOR,DUAL,BIPOLAR,SIP,9PIN,PLASTIC
VOLT COMPARATOR,DUAL,BIPOLAR,SOP,8PIN,PLASTIC
|
Toshiba.
|
| IDT72V845L15PF IDT72V845L20PF IDT72V805L15PFI IDT7 |
15MBaud CMOS logic optocoupler. Dual channel SOIC-8; Package: SOIC-W; No of Pins: 8; Container: Box
15MBaud CMOS logic optocoupler. Dual channel SOIC-8; Package: SOIC-W; No of Pins: 8; Container: Tape & Reel
8 Input, 6 Output Video Switch Matrix with Output Drivers; Package: TSSOP; No of Pins: 24; Container: Rail
3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 3.3伏CMOS双SyncFIFO56 × 18，双512 × 18，双1,024 × 18，双2,048 × 18
|
Integrated Device Technology, Inc.
|
| PVI1050 PVI1050N PVI1050NS PVI5050N PVI5050NS PVI5 |
Photovoltaic Isolator Single and Dual Channel 5-10 Volt Output
Photovoltaic Isolator Single and Dual Channel 5-10 Volt Output 光电隔离器单和双通道5-10伏输
2 Form A Photo Voltaic Isolator in a 8-pin DIP Package
2 Form A Photo Voltaic Isolator in a 8-pin SMT Package
|
International Rectifier, Corp.
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HIP6602BCRZ-T HIP6602BCRZA-T HIP6602BCRZA HIP6602B |
FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
Dual Channel Synchronous Rectified Buck MOSFET Driver 双通道同步整流降压MOSFET驱动
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
