| PART |
Description |
Maker |
| TE28F640B3XXX GE28F160B3BC70 GE28F160B3TC80 GE28F0 |
(TE28F Series) 3 Volt Advanced Boot Block Flash Memory
3 Volt Advanced Boot Block Flash Memory 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
3 Volt Advanced Boot Block Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
3 Volt Advanced Boot Block Flash Memory 1M X 8 FLASH 2.7V PROM, 90 ns, PBGA46
3 Volt Advanced Boot Block Flash Memory 4M X 16 FLASH 3V PROM, 100 ns, PBGA48
|
Intel Corporation
Intel, Corp.
|
| FC15539 FC15539H FC15539K |
SINGLE AND DUAL-CHANNEL 5-VOLT TRANSCEIVERS
|
List of Unclassifed Manufacturers
ETC
|
| TE28F004B3B110 TE28F004B3B90 TE28F004B3T110 TE28F0 |
3 Volt Advanced Boot Block Flash Memory
|
INTEL[Intel Corporation]
|
| TE28F640C3 |
(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory
|
Intel Corporation
|
| 28F320C3 28F800C3 28F640C3 28F160C3 29064509 |
3 Volt Advanced Boot Block Flash Memory
From old datasheet system
|
Intel
|
| TE28F016C3B110 TE28F016C3B90 TE28F016C3T110 TE28F0 |
3 VOLT ADVANCED BOOT BLOCK 8- 16- 32-MBIT FLASH MEMORY FAMILY
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| TA7522F TA7522S EA09629 |
DUAL VOLTAGE COMPARATOR
From old datasheet system
VOLT COMPARATOR,DUAL,BIPOLAR,SIP,9PIN,PLASTIC
VOLT COMPARATOR,DUAL,BIPOLAR,SOP,8PIN,PLASTIC
|
Toshiba.
|
| BAT15-099 BAT1599 Q62702-A66 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAT15-04 BAT15_04 Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) 硅双肖特基二极管（星展混频器应用12 GHz低噪声系数低屏障型）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash
EEPROM EEPROM
|
TE Connectivity, Ltd.
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| IPM6220 IPM6220CA IPM6220EVAL1 |
Advanced Triple PWM and Dual Linear Power Controller, Vbatt Hystersis Typ=150mV
Advanced Triple PWM and Dual Linear Power Controller for Portable
|
INTERSIL[Intersil Corporation]
|
