| PART |
Description |
Maker |
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EM6AA160TS EM6AA160TS-4G EM6AA160TS-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| EM6AA160TSA EM6AA160TSA-4G EM6AA160TSA-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| AS4C32M16D1A AS4C32M16D1A-5TCN AS4C32M16D1A-5TIN A |
32M x 16 bit DDR Synchronous DRAM
Internal pipeline architecture
|
Alliance Semiconductor ...
|
| MC-45D16DA721KFA-C80 MC-45D16DA721KF-C80 MC-45D16D |
16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
Elpida Memory
|
| MC-45D16CA721 MC-45D16CA721KF-C75 MC-45D16CA721KF- |
16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-45D32CC721 MC-45D32CC721KFA-C75 MC-45D32CC721KF |
32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| NCP51200 |
3 Amp Source / Sink VTT Termination Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| IS61DDB21M36-250M3 IS61DDB22M18-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc.
|
| EM68932DVKA EM68932DVKA-6H EM68932DVKA-75H |
4M x 32 Mobile DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| IS61DDB42M18-250M3 IS61DDB42M18 IS61DDB41M36-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
| IS61DDB41M36-250M3 IS61DDB42M18-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc.
|
