| PART |
Description |
Maker |
| AS222-92 |
AS222-92:PHEMT GaAs IC SPDT Switch 0.1 GHz|DC-6 GHz Plastic Packaged and Chip|SPST AS222 - 92：PHEMT的砷化镓集成电路单刀双掷开.1-3千兆赫|直流- 6 GHz的塑料包装和芯片|聚苯乙烯
PHEMT GaAs IC SPDT Switch 0.1 - 3 GHz
|
SKYWORKS[Skyworks Solutions Inc.]
|
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| TGF2022-06 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
| TGF2021-04 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2021-01 |
DC-12 GHz Discrete Power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2022-60 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| SXE-1089Z |
0.05-3 GHz, Cascadable pHEMT MMIC Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
| MRFG35010 |
.5 GHz, 10 W, 12 V Power FET GaAs PHEMT
|
MOTOROLA
|
