PART |
Description |
Maker |
BLF573S BLF573 |
HF / VHF power LDMOS transistor A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
BLF7G22LS-100P |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
BLF7G22L-130N |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G15LS-200 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLP05H635XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|