| PART |
Description |
Maker |
| MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks
8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
| IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44
Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MT4LC4M4E8DJ |
4 MEG x 4 EDO DRAM
|
Micron Technology
|
| MT4C4M4E8T MT4C4M4E9T MT4C4M4E8TG MT4LC4M4E9TGS MT |
4 MEG x 4 EDO DRAM
|
MICRON[Micron Technology]
|
| MT9LD272AG-5X MT18LD472A MT18LD472AG-5X MT18LD472A |
2, 4 MEG x 72 NONBUFFERED DRAM DIMMs
|
Micron Technology
|
| MT5LC128K8D4S13A MT5LC64K16D4S13A |
S13A 1 MEG SRAM DIE
|
Micron Technology, Inc.
|
| 27C210 |
1 MEG CMOS EPROM (64K x 16)
|
Philips
|
| AS4LC4M4883C AS4LC4M4 |
4 meg x 4 DRAM, 3.3V EDO page mode
4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
|
ETC
AUSTIN[Austin Semiconductor]
|
