| PART |
Description |
Maker |
| EPC-1300-0.5-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-0 EPC-13.0-1.0-0 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-470-0.9 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.5-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-3.0-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| KIP-205-1 |
2.5 Gbps InGaAs PIN Photodiode Chip
|
KODENSHI KOREA CORP.
|
| KOM0622045 |
8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG
Siemens Semiconductor Group
|
| S2592 |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
|
Hamamatsu Photonics
|
| S2592 |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
|
Hamamatsu Corporation
|
