| PART |
Description |
Maker |
| SST29EE010-150-3I-E SST29EE010-200-3I-E SST29EE010 |
1 Megabit (128K x 8) Page Mode EEPROM
|
Silicon Storage Technology, Inc.
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| S29GL016A S29GL016A100BAI010 S29GL016A100BAI012 S2 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
|
| S29GL016A10FAIR10 S29GL016A30FAIR10 S29GL032A10FAI |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
http://
|
| 28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
CONNECTOR ACCESSORY
POT 100K OHM THUMBWHEEL CERM ST
|
http://
NXP Semiconductors N.V.
Maxwell Technologies, Inc
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| V53C16125H V53C16125HK60 V53C16125HT50 |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
128K x 16bit high performance fasr page mode CMOS dynamic RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
|
| AT49BV001A AT49BV001A-55JI AT49BV001A-55TI AT49BV0 |
128K x 8 (1M bit), 2.7-Volt Read and Write, Top or Bottom Boot Parametric Block Flash.
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory
1-MEGABIT (128K X 8) SINGLE 2.7-VOLT BATTERY-VOLTAGE⒙ FLASH MEMORY
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AC 12C 12#12 SKT RECP
JT 100C 100#22D SKT RECP
AT49BV001A(N)(T) [Updated 9/03. 18 Pages] 128K x 8 (1M bit). 2.7-Volt Read and Write. Top or Bottom Boot Parametric Block Flash.
AC 6C 3#16 3#4 SKT RECP
Circular Connector; No. of Contacts:55; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 1兆位128K的8）单2.7伏电池电压⑩闪存
1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| S29GL064N90DFI040 S29GL064N90BFI033 S29GL032N90TFI |
4M X 16 FLASH 3V PROM, 90 ns, PBGA64 9 X 9 MM, LEAD FREE, FBGA-64
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
Spansion, Inc.
SPANSION LLC
|
| SST29VE010-200-4I-EHE SST29VE010-200-4I-WHE SST29V |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
