| PART |
Description |
Maker |
| PSMN028-100YS |
N-channel LFPAK 100V 27.5 m standard level MOSFET
N-channel LFPAK 100V 27.5 m楼? standard level MOSFET
|
NXP Semiconductors
|
| PSMN9R5-30YLC |
N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using
N-channel 30 V 9.8 mlogic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors
|
| PSMN5R9-30YL |
N-channel 6.1 m30 V TrenchMOS logic level FET in LFPAK
N-channel 6.1 m 30 V TrenchMOS logic level FET in LFPAK
|
NXP Semiconductors N.V.
|
| IRF5EA1310 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
THRU-HOLE MOUNT (LCC-28) 100V, N-CHANNEL
|
IRF[International Rectifier]
|
| HUF76633S3S HUF76633P3 FN4693 HUF76633P3T |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-220AB
38A, 100V, 0.036 Ohm, N-Channel, Logic 38A, 100V, 0.036 Ohm, N-Channel, Logic
From old datasheet system
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| FQP90N10V2 FQPF90N10V2 |
100V N-Channel Advanced QFET V2 series
100V N-Channel MOSFET 90 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| PSMN030-60YS |
N-channel LFPAK 60 V 24.7 m惟 standard level MOSFET
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
|
NXP Semiconductors
|
| PSMN4R0-30YL |
N-channel 30 V 4 m? logic level MOSFET in LFPAK
|
NXP SEMICONDUCTORS
|
| PSMN1R7-30YL11 |
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
|
NXP Semiconductors N.V.
|
