PART |
Description |
Maker |
PHD22NQ20T-01 PHD22NQ20T |
N-channel TrenchMOS standard level FET N-channel TrenchMOS standard level FET 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-channel TrenchMOS?? standard level FET N-channel Trenchmos (tm) standard level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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BUK9728-55A NXPSEMICONDUCTORS-BUK9728-55A |
BUK9728-55A; N-channel Trenchmos (tm) logic level FET N-channel TrenchMOS standard level FET
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
PHK24NQ04LT |
TrenchMOS logic level FET 21200 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012 From old datasheet system TrenchMOS (tm) logic level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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PHT11N06T PHT11N06 |
TrenchMOS transistor Standard level FET 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET TrenchMOS transistor Logic level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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BUK9775-55 BUK9775-56 |
TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET) TrenchMOS(商标)场效应晶体管逻辑电平TrenchMOS(商标)晶体管逻辑电平场效应管 TrenchMOS transistor Logic level FET 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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PH955L |
N-channel TrenchMOS logic level FET Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle N-channel TrenchMOS(tm) logic level FET
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NXP Semiconductors Philips Semiconductors
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BUK9506-55A BUK9E06-55A BUK9506_9606_9E06_55A-03 B |
TrenchMOSlogic level FET TrenchMOS?logic level FET TrenchMOS TM logic level FET TrenchMOS (tm) logic level FET From old datasheet system TrenchMOS logic level FET
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Philips NXP Semiconductors
|
PMV117EN |
micro TrenchMOS(tm) enhanced logic level FET N-channel TrenchMOS logic level FET uTrenchMOS enhanced logic level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
BUK664R8-75C BUK664R8-75C-15 |
N-channel TrenchMOS FET
|
NXP Semiconductors N.V.
|
BUK6507-75C |
N-channel TrenchMOS FET
|
NXP Semiconductors
|
BUK9E06-55B |
N-channel TrenchMOS FET
|
NXP Semiconductors
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