PART |
Description |
Maker |
U20DL2C53A |
High Efficiency Diode Stack (HED) Silicon Epitaxial Type Switching Mode Power Supply Application Converter&Chopper Application TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
MA2C185 MA185 |
Silicon epitaxial planar type 0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
KDS120V |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
KDS112-15 |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
KTX401E |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) 平面PNP晶体管外延硅外延平面型二极管(通用,超高速开关)
|
KEC Holdings KEC[KEC(Korea Electronics)]
|
SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
KDV175E |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|