PART |
Description |
Maker |
APT30GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 58A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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APT30GT60BRDQ2G APT30GT60BRDQ2 |
Thunderbolt IGBT
|
ADPOW[Advanced Power Technology]
|
APT150GN60B2 APT150GN60B2G |
Thunderbolt IGBT
|
Microsemi Corporation
|
APT50GT120LR APT50GT120B2R APT50GT120B2RG |
Thunderbolt IGBT
|
Microsemi Corporation
|
APT100GT60B2R APT100GT60B2RG APT100GT60LRG |
Thunderbolt IGBT
|
Microsemi Corporation
|
APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
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APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
|
APT30GS60KR APT30GS60KRG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
APT20GN60B APT20GN60BG APT20GN60S APT20GN60SG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT200GT60JR |
Thunderbolt IGBT Thunderbolt IGBT
|
Microsemi Corporation
|