| PART |
Description |
Maker |
| ZXMC10A816N8 ZXMC10A816N8TC |
100V SO8 Complementary Dual enhancement mode MOSFET
|
Diodes Incorporated
|
| ZXMHC3A01N8 ZXMHC3A01N8TC |
30V SO8 Complementary enhancement mode MOSFET H-Bridge
|
Diodes Incorporated
|
| ZXMHC3F381N8 ZXMHC3F381N8TC |
30V SO8 Complementary enhancement mode MOSFET H-Bridge
|
Diodes Incorporated
|
| CFD2059R CFD2059O |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 80 hFE. Complementary CFB1367R
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 240 hFE. Complementary CFB1367
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFB1367O
|
Continental Device India Limited
|
| ZXMHC10A07T8TC ZXMHC10A07T8 ZXMHC10A07T8TA |
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| EP503IR4L017W |
Enhance Power LED
|
PARA LIGHT ELECTRONICS CO.,...
|
| LTL-523-11 |
Black case enhance contrast ratio
|
Lite-On Technology Corporation
光宝科技股份有限公司
|
| IRHQ6110 IRHQ63110 |
TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC 晶体管| MOSFET的|阵|互补| 100V的五（巴西）直| 3A条（丁）| LLCC
RADIATION HARDENED POWER MOSFET
|
HIROSE ELECTRIC Co., Ltd.
International Rectifier
|
| 2N3773 2N6609 ON0042 |
From old datasheet system
COMPLEMENTARY POWER TRANSISTORS
Complementary Slllcon Powar Translstors
|
ONSEMI[ON Semiconductor]
|
| 2N6488 2N6491 2N6487 2N6490 ON0097 |
15AMPERE COMPLEMENTARY
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| MT89L85 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) 3.3 V Non-blocking Enhance Digital Switch (EDX) with Constant Delay Mode
|
Zarlink Semiconductor
|
