PART |
Description |
Maker |
ML74WLBC |
NOR Gate (unbuffered) and Inverter (unbuffered)
|
Minilogic Device Corporation Limited
|
ML74WLEF |
OR Gate (unbuffered) and Buffered
|
Minilogic Device Corporation Limited
|
ML74WLAF |
NAND Gate (unbuffered) and Buffer
|
Minilogic Device Corporation Limited
|
SCL4011UB SCL4001UB |
UNBUFFERED QUAD TWO INPUT NAND GATE
|
R & E International, Inc.
|
IN74HCU04 IN74HCU04D IN74HCU04N IZ74HCU04 25HCU04A |
Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
KK74HCU04A KK74HCU04AD KK74HCU04AN |
Hex Unbuffered Inverters High-Performance Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
NC7WZU04P6XNL |
TinyLogic UHS Dual Unbuffered Inverter LVC/LCX/Z SERIES, DUAL 1-INPUT INVERT GATE, PDSO6
|
Fairchild Semiconductor, Corp.
|
M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费(符合RoHS
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD564646L8 HYMD5646468 HYMD564646XXX HYMD5646468 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 512MB 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
WG14013FR04 WG12013FR02 WG18015R FR35 WG18027R12 W |
1340 A, 1300 V, GATE TURN-OFF SCR 2150 A, 1500 V, SYMMETRICAL GTO SCR 820 A, 4000 V, GATE TURN-OFF SCR 1685 A, 2700 V, GATE TURN-OFF SCR 870 A, 600 V, GATE TURN-OFF SCR 700 A, 600 V, GATE TURN-OFF SCR 730 A, 1000 V, GATE TURN-OFF SCR 890 A, 1000 V, GATE TURN-OFF SCR
|
WESTCODE SEMICONDUCTORS LTD
|
HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HY |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|