| PART |
Description |
Maker |
| ML74WLAE |
NAND Gate (unbuffered) and OR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
| ML74WLBF |
NOR Gate (unbuffered) and Buffer
|
Minilogic Device Corporation Limited
|
| MC74HCU04ADR2G MC74HCU04ADG |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS HC/UH SERIES, HEX 1-INPUT INVERT GATE, PDSO14
|
ON Semiconductor
|
| SL74HCU04 SL74HCU04D SL74HCU04N |
Hex Unbuffered Inverters(High-Performance Silicon-Gate CMOS)
|
SLS[System Logic Semiconductor]
|
| 25HCU04A |
Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS
|
INTEGRAL JOINT STOCK COMPANY
|
| MC74HCU04A |
Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS
|
ON Semiconductor
|
| MC74LCXU04DR2 |
Low-Voltage CMOS Unbuffered Hex Inverter With 5 V−Tolerant Inputs LVC/LCX/Z SERIES, HEX 1-INPUT INVERT GATE, PDSO14
|
ON Semiconductor
|
| M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费（符合RoHS
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M464S6554BTS-CL7A M464S3354BTS M464S3354BTS-C7A M4 |
SDRAM Unbuffered SODIMM 内存缓冲SODIMM
SDRAM Unbuffered SODIMM 内存缓冲的SODIMM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYMD264646AL8-H HYMD264646AL8-K HYMD264646A8-H HYM |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
