PART |
Description |
Maker |
IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 60 V, 0.023 ohm, N-CHANNE 81 A, 60 V, 0.012 ohm, N-CHANNE 27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. VISHAY INTERTECHNOLOGY INC
|
2SJ296 2SJ296S 2SJ296L |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB Silicon P-Channel MOS FET(P沟道MOSFET) 硅P沟道场效应晶体管性(P沟道MOSFET的)
|
Hitachi,Ltd.
|
RJF0612JPE-00-J3 |
60V - 50A - N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
MSN0603L MSN0603L-SOT23 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
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MSN0675D MSN0675D-TO220-3L |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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STT3458N12 |
3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
MSN06B2K MSN06B2K-TO220 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
RJF0612DPE-00-J3 |
60V - 50A - N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
RJE0616JSP RJE0616JSP-00-J3 RJE0616JSP-15 |
Silicon P Channel MOS FET Series Power Switching -60V, -4A Silicon P Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
FDS5351 |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 6.1 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel PowerTrench㈢ MOSFET 60V, 6.1A, 35mヘ N-Channel PowerTrench? MOSFET 60V, 6.1A, 35mΩ
|
Fairchild Semiconductor, Corp.
|
RJK0629DPE RJK0629DPE-15 |
60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
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