| PART |
Description |
Maker |
| D5017UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 50V - 175MHz SINGLE ENDED
|
Seme LAB
|
| D1003UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| STK433-330N-E |
3channel class-AB Audio Power IC 150W 150W 150W
|
Sanyo Semicon Device
|
| MRF141G |
RF Power FET 300W, 175MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| STK433-130-E |
Thick-Film Hybrid IC 2-channel class AB audio power IC, 150W 150W
|
Sanyo Semicon Device
|
| STK433-130N-E |
2channel class-AB Audio Power IC 150W 150W
|
Sanyo Semicon Device
|
| MRF150 MRF150-15 |
RF Power FET
RF Power FET 150W, to 150MHz, 50V
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MJ10002 MJ10003 |
FLUSH LIGHT, YELLOW; Colour:Yellow; Height, above panel:11.5mm; IP rating:IP 66; Shock resistance:>30; Temp, op. max:70(degree C); Temp, op. min:-25(degree C) RoHS Compliant: NA
POWER TRANSISTORS(10A/350-400V/150W)
POWER TRANSISTORS(10A,350-400V,150W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| RD30HVF1 RD30HVF1-101 |
Silicon MOSFET Power Transistor,175MHz,30W
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
