PART |
Description |
Maker |
BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd 20 V, 1 A PNP medium power transistor
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NXP Semiconductors
|
CLT4123 |
Max. 8W, Medium & Large size LCD Monitors and vehicle applications
|
TOKO, Inc
|
BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. 50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. ; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA ; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A ; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
Continental Device India Limited
|
TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五(公报)最大|的DO - 215AA
|
ITT, Corp.
|
FAN2501S33 FAN2500S |
Pch Power MOSFET; Surface Mount Type: N; Package: TFP; R DS On (Ω): (max 0.12) (max 0.09); I_S (A): (max -18) 积极的固定电压稳压器
|
HIROSE ELECTRIC Co., Ltd.
|
BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
1503 1503J 1503-100A 1503-100B 1503-100C 1503-120B |
Max delay 35 ns, Mechanically variable delay line Max delay 250 ns, Mechanically variable delay line Max delay 150 ns, Mechanically variable delay line Max delay 130 ns, Mechanically variable delay line Max delay 80 ns, Mechanically variable delay line Max delay 60 ns, Mechanically variable delay line Max delay 50 ns, Mechanically variable delay line Max delay 40 ns, Mechanically variable delay line Max delay 30 ns, Mechanically variable delay line Max delay 25 ns, Mechanically variable delay line Max delay 20 ns, Mechanically variable delay line Max delay 200 ns, Mechanically variable delay line Max delay 160 ns, Mechanically variable delay line Max delay 15 ns, Mechanically variable delay line Max delay 140 ns, Mechanically variable delay line Max delay 120 ns, Mechanically variable delay line Max delay 100 ns, Mechanically variable delay line Mechanically variable passive delay line
|
Data Delay Devices Inc
|
PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd From old datasheet system
|
NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
|
MPAT-05840643-4015 MPAT-06400720-4015 MPAT-0750085 |
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 6400 MHz - 7200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX 10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX 1500 MHz - 1800 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.1 dB INSERTION LOSS-MAX 950 MHz - 1750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.2 dB INSERTION LOSS-MAX 1275 MHz - 1480 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
CX380D5 |
Solid-State PC Board Relay; Output Device:SCR; Output Voltage Max:530Vrms; Output Voltage Min:48Vrms; Control Voltage Max:15VDC; Control Voltage Min:4VDC; Load Current Max:5A; Switching:Zero Cross; Operating Voltage Max:530V
|
CRYDOM CORP
|
TIP812-DOC-20 TIP812-TM-21 TIP812 TIP812-10 TIP812 |
SERCOS Controller SERCOS总线控制 RES 680 OHM 1% 3W SILICONE WW SERCOS总线控制 N-Channel MOSFETs (>500V
900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 21.0 A; IDpuls (max): 63.0 A;
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
RQD-1.805 RQS RQS-93.3 RQD-1.809 RQD-1.81.8 RQD-1. |
0.25 Watt SMD Single & Dual Output N-Channel Small Signal MOSFETs (20V
800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 55.0 V; RDS (on) (max) (@10V): 650.0 mOhm; RDS (on) (max) (@4.5V): 825.0 mOhm; RDS (on) (max) (@2.5V): -; 0.25 Watt SMD Single & Dual Output 0.25瓦特贴片 CAP Tantalum-Wet Miniature 6V 22.0 uF /-20% Silver can Axial , TPC - Hilton 0.25瓦特贴片
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RECOM[Recom International Power] RECOM Power Inc. RECOM Electronic GmbH
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