PART |
Description |
Maker |
RA60H4047M108 RA60H4047M1 RA60H4047M1-101 |
RF MOSFET MODULE 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Mitsubishi Electric Semiconductor
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RA60H4047M1-101 RA60H4047M1 |
400 MHz - 470 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 400-470MHZ 60W 12.5V, 2 STAGE AMP. FOR MOBILE RADIO
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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RA03M4547MD RA03M4547MD-101 |
RF MOSFET MODULE 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
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http:// Mitsubishi Electric Semiconductor
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RA55H4047M RA55H4047M10 |
400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
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Mitsubishi Electric Semiconductor
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RA13H4047M_06 RA13H4047M RA13H4047M-101 RA13H4047M |
RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RA13H4047M |
RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Sem...
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QJD0240002 |
Dual Power MOSFET Module (400 Amperes/200 Volts) 400 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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M67749HR |
RF POWER MODULE 440-470MHz, 12.5V, 7W, FM PORTABLE RADIO
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Mitsubishi Electric Corporation
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RFFM6401 RFFM6401PCK-410 RFFM6401SB RFFM6401SR RFF |
3.3V to 4.0V, 450MHz to 470MHz Transmit/Receive Front End Module
|
RF Micro Devices
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M68732H 68732H M68732 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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APT40M70B2VFRG APT40M70LVFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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Microsemi, Corp.
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