| PART |
Description |
Maker |
| HE412B |
Voltage Variable Attenuators
|
BOWEI Integrated Circuits CO.,LTD.
|
| HE411B |
Voltage Variable Attenuators
|
BOWEI Integrated Circuits CO.,LTD.
|
| ARC-1 ARC-3 ARC-4 |
VARIABLE ATTENUATORS, MANUAL
|
Merrimac Industries, Inc.
|
| HRLA-C1ML-06-PJ |
Optical Variable Attenuators
|
http://
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
|
| AV074F-20 AF06CK-20 AV086-30 AF084F-20 AV084H-10 A |
CONTINUOUSLY VARIABLE ATTENUATORS
|
Advanced Technical Materials Inc.
|
| EM2009-VOA4 EM2009VOA8 |
LambdaDriver? - Variable Optical Attenuators (VOA) Module
|
MRV Communications, Inc.
|
| MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
From old datasheet system
|
Leshan Radio Company, Ltd.
ONSEMI[ON Semiconductor]
|
| BAP1321-03 |
High voltage, current controlled RF resistor for RF attenuators and switches
|
TY Semiconductor Co., Ltd
|
| BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB
From old datasheet system
|
NXP Semiconductors N.V.
Philipss
Philips Semiconductors
|
| RVA-3000 |
Voltage Variable Attenuator 50楼? 20 to 3000 MHz
Voltage Variable Attenuator 50Ω 20 to 3000 MHz
|
Mini-Circuits
|
| BB142 BB142115 |
4.6 pF, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
