| PART |
Description |
Maker |
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| EIC7179-12 |
7.10-7.90 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC0910-25 |
9.50-10.50 GHz 25-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC36V5258 |
5.2-5.8 GHz BAND 4W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| EIC1314-12 |
13.75-14.50 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1111-2 |
11.0-11.5 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC6775-15 |
6.70-7.50 GHz 15-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1314-8 |
13.75-14.5 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1415-0.3P |
14.0-14.5 GHz 0.3-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC8596-12 EIC8596-12NH |
8.50-9.60 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
http://
|
