| PART |
Description |
Maker |
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| EIB1718-1P |
17.7-18.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX39V0717 X390717 |
10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段8瓦特国内MATCHD砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFRX1702 |
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz
|
RF Micro Devices
|
| PAT-10 PAT-15 PAT-20 PAT-3 PAT-6 |
DC to 7GHz
|
Mini-Circuits
|
| MB510 |
2.7GHz TWO MODULUS PRESCALER
|
Fujitsu Microelectronics
Fujitsu Limited
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| MGFS36E252708 MGFS36E252710 |
2.5-2.7GHz HBT HYBRID IC
|
Mitsubishi Electric Semiconductor
|
| BFG135 |
NPN 7GHz wideband transistor
|
Philips Semiconductors
|
| LT550409 LT5504-15 |
800MHz to 2.7GHz RF Measuring Receiver
|
Linear Technology
|
