| PART |
Description |
Maker |
| SFD251H |
Crossed-Field Amplifier
|
Communications & Power Industries, Inc.
|
| NJ32 |
Silicon Junction Field-Effect Transistor General Purpose Amplifier
|
INTERFET[InterFET Corporation]
|
| 2SK285507 2SK2855 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
|
Toshiba Semiconductor
|
| NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| 2SK170 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK2013 |
Field Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application
|
TOSHIBA
|
| 2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application
|
TOSHIBA
|
| 3SK240 |
Field Effect Transistor GaAs N-Channel Dual Gate MES Type TV Tuner, UHF RF Amplifier Applications
|
TOSHIBA
|
| 2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
| 2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK373 |
Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications
|
TOSHIBA
|
