PART |
Description |
Maker |
TBB1004DMTL-H TBB100411 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1008 |
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB502M11 BB502MBS-TL-H |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB501M BB501MAS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB302C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|
BB301M BB301 |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|
BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
BB502C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
BB601M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|
BB505M BB505MES |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|