PART |
Description |
Maker |
PS21965-4S |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21965-ST |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
P930-06 P444 P465 P474 P577-04 P412W P412K P414KW |
THYRISTOR MODULE|AC SWITCH|1KV V(RRM)|44A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|20A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|20A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|20A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|20A I(T) THYRISTOR MODULE|AC SWITCH|600V V(RRM)|44A I(T) 16 BIT MCU/DSP 28LD 40MIPS 32KB FLASH, -40C to 125C, 28-SOIC 300mil, TUBE
|
Microchip Technology, Inc.
|
IRG4BC40U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
International Rectifier
|
PS21964-C PS21964-A |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21963-S |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21353-N |
DIP - IPM 600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
AOK20S60L |
600V 20A a MOS
|
Alpha & Omega Semicondu...
|
AOK20N60L |
600V,20A N-Channel MOSFET
|
Alpha & Omega Semicondu...
|
6MBP20RH060 |
IGBT-IPM(600V/20A)
|
http:// FUJI[Fuji Electric]
|
RJL60S5DPE |
600V - 20A - SJ MOS FET
|
Renesas Technology
|