PART |
Description |
Maker |
PS21965-4 PS21965-4A PS21965-4C PS21965-4W |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
PS21963-4E PS21963-4E09 PS21963-4CE PS21963-4EW PS |
Dual-In-Line Package Intelligent Power Module 600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
ENA1845 |
Planar Ultrafast Rectifier, Low VF type, 20A, 600V, 1.4V, TO-220F-2FS
|
ON Semiconductor
|
FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
IKQ100N60TA |
600V low loss switching series third generation
|
Infineon Technologies A...
|
STW20NM60 |
N-CHANNEL Power MOSFET N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh?Power MOSFET N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh⑩Power MOSFET N-CHANNEL 600V - 0.26 OHM - 20A TO-247 MDMESH POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
PS21964-4S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21964-C PS21964-A |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21353-N |
DIP - IPM 600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
STGW20NB60K |
N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH?/a> IGBT N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
6MBI20GS-060 |
IGBT(600V 20A)
|
Fuji Electric
|
RJL60S5DPE |
600V - 20A - SJ MOS FET
|
Renesas Technology
|