| PART |
Description |
Maker |
| MSM586SEG MSM586SEL MSM586SEN |
133MHz, 0MB SDRAM
|
Advanced Digital Logic, Inc.
|
| K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S560432D-NC75 K4S560432D-NC7C K4S560432D-NC1H K4 |
256Mbit SDRAM, LVTTL, 133MHz
|
Samsung Electronic
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| AS5SP256K36DQ AS5SP256K36DQ-30ET AS5SP256K36DQ-30I |
Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
|
Austin Semiconductor
|
| AS5SP128K32DQ-7.5IT AS5SP128K32DQ-7.5ET AS5SP128K3 |
Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
|
Austin Semiconductor
http://
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| EM638165TS-7.5 |
133MHz 4M x 16 synchronous DRAM (SGRAM)
|
Etron Tech
|
| K4S560832D-NCL7C |
8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz
|
Samsung Electronic
|
| AV9342F-T |
133MHz clock generator and integrated buffer for powerPC
|
Integrated Circuit Systems
|
