| PART |
Description |
Maker |
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| LD4606A |
30 GHz, 380 W CW, HIGH EFFICIENCY, HIGH POWER GAIN
30 GHz 380 W CW HIGH EFFICIENCY HIGH POWER GAIN
|
NEC[NEC]
|
| RFMA7090-1W-Q7 |
7.0 - 9.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA1720-1W-Q7 |
17.7 - 19.7 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| LD7215W |
6 GHz / 3 kW CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz, 3 kW CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC[NEC]
|
| AMMP-5620-BLKG AMMP-5620-TR1G AMMP-562013 AMMP-562 |
6 ?20 GHz High Gain Amplifier in SMT Package
|
AVAGO TECHNOLOGIES LIMITED
|
| AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
AD[Analog Devices]
|
