| PART |
Description |
Maker |
| HYE18P128160AF-12.5 |
Synchronous Burst CellularRAM (1.5G) CellularRAM
|
infineon
|
| EMC326SP16AJT-10L EMC326SP16AJT-10LF EMC326SP16AJT |
2Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
|
| AM29LV641D AM29LV640D AM29LV640DH101REE AM29LV640D |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640D/Am29LV641D-64Megabit(4Mx16-Bit)CMOS3.0Volt-onlyUniformSectorFlashMemorywithVersatileIOControl
|
AMD
AMD[Advanced Micro Devices]
|
| K3P7U1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung semiconductor
|
| K3N7VU4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 K3 |
2M x 32 Synchronous MASKROM Data Sheet
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYE18P16161AC-L70 HYE18P16161AC-70 HYE18P16161AC-8 |
16M Asynchronous/Page CellularRAM
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 PLASTIC, VFBGA-48
|
Infineon Technologies A...
Infineon Technologies AG
|
| KMM5324004CSWG KMM5324004CSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| HY5DV641622AT-4 HY5DV641622AT-33 HY5DV641622AT-36 |
64M(4Mx16) DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| CMS6416LAF CMS6416LAH CMS6416LAG |
64M(4Mx16) Low Power SDRAM
|
http://
|
| KMM5364005BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
