| PART |
Description |
Maker |
| K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4F641612D-TI K4F661612D-TI K4F661612D-TP K4F64161 |
4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| IS66WVE51216EALL IS67WVE51216BLL IS67WVE51216CLL |
Asynchronous and page mode interface
|
Integrated Silicon Solu...
|
| V53C16126H V53C16126HK35 V53C16126HK60 V53C16126HT |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
DRAM|FAST PAGE|128KX16|CMOS|SOJ|40PIN|PLASTIC 内存|快速页面| 128KX16 |的CMOS | SOJ | 40PIN |塑料
High performance 128K x 16bit fast page mode CMOS dynamic RAM
|
Mosel Vitelic Corp
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| IS66WVE2M16ALL |
Asynchronous and page mode interface
|
Integrated Silicon Solu...
|
| IDT7207L30SOG IDT7207L25SOG IDT7207L40SOG IDT7207L |
CMOS ASYNCHRONOUS FIFO 16K X 9 OTHER FIFO, 50 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 32K X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 异步FIFO的CMOS
CMOS ASYNCHRONOUS FIFO 2K X 9 OTHER FIFO, 15 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 16K X 9 OTHER FIFO, 25 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 64K X 9 OTHER FIFO, 25 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 64K X 9 OTHER FIFO, 25 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 64K X 9 OTHER FIFO, 20 ns, PDIP28
|
Integrated Device Technology, Inc.
|
| 67401J 67401N C67402N 67L402J 67402BJ 67401BJ 6740 |
8 bit SIPO shift register
3.3V Input to Regulated 5V Output Charge Pumps
x4 Asynchronous FIFO x4异步FIFO
x5 Asynchronous FIFO X5的异步FIFO
|
Pomona Electronics
Electronic Theatre Controls, Inc.
|
| IDT7202 IDT72021 IDT72021L25D IDT72021L25DB IDT720 |
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9 / 2K x 9 / 4K x 9
CLIP HOLD-DOWN FOR SP/DP MK SER
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 异步FIFO的CMOS带重传每1000 × 9K × 9K的9
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 4K X 9 OTHER FIFO, 35 ns, PQCC32
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 4K X 9 OTHER FIFO, 50 ns, PQCC32
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
