PART |
Description |
Maker |
KM68FS1000 KM68FR1000 |
128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM)的
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
EM621FV16BU |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
EM640FR16AS-45L EM640FR16AS-45S EM640FR16AS-85L EM |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic... Emerging Memory & Logic Solutions Inc
|
BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
K6F2016U4G K6F2016U4G-F K6F2016U4G-FF55 K6F2016U4G |
2Mb(128K x 16 bit) Low Power SRAM
|
http:// SAMSUNG[Samsung semiconductor]
|
LY6212816 LY6212816GV LY6212816LL LY6212816LLE LY6 |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
LY621024 |
128K X 8-Bit Low Power CMOS SRAM
|
Lyontek
|
BS616LV2016DIP55 BS616LV2016ECG55 BS616LV2016ECG70 |
Very Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconductor Brilliance Semiconducto...
|
LY62W1024 LY62W1024E LY62W1024GL LY62W1024GV LY62W |
128K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
BS616LV2010 BS616LV2010EC BS616LV2010EI |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor]
|