PART |
Description |
Maker |
PE15A1008 |
23 dBm IP3, 1.6 dB NF, 13 dBm, 20 MHz to 3 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
BGA318 Q62702-G0043 |
From old datasheet system Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器(级0瓦,增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫) Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
HMC7885 HMC7885FH18 |
2 GHz to 6 GHz, 45 dBm Power Amplifier
|
Analog Devices
|
TA005-025-25-20 |
0.5 - 2.5 GHz 20 dBm Amplifier
|
Transcom, Inc.
|
TA021-035-32-15 |
2.1 - 3.5 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
TA075-180-24-12 |
7.5 - 18 GHz 12 dBm Amplifier
|
Transcom, Inc.
|
Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
UPC1679 UPC1679G UPC1679G-E1 UPC1679G-E2 |
5 V-BIAS, 5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER 5伏偏置,5.5 dBm的输出,1.8 GHz的宽频带泗MMIC放大
|
NEC, Corp. NEC Corp. NEC[NEC]
|
PE71S2015 |
SMA SPST PIN Diode Switch Operating From 2 GHz to 26.5 GHz Up To 30 dBm
|
Pasternack Enterprises,...
|