| PART |
Description |
Maker |
| CS5509-ASZ CS5509 CS5509-AP CS5509-AS |
SINGLE SUPPLY 16BIT A/D CONVERTER
|
CIRRUS[Cirrus Logic]
|
| AKD4563A AK4563A AK4563AVF |
16bit 4AD/2DA APGA/ALC 3V
Low Power 16bit 4ch ADC & 2ch DAC with ALC
|
AKM
Asahi Kasei Microsystems
|
| AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| CS5509 CS5509-AP CS5509-AS 5509 |
SINGLE SUPPLY 16BIT A/D CONVERTER
From old datasheet system
|
ETC
|
| 6TR60 15TD30 15TR13 15TR35 12TD30 12TR40 28TR23 28 |
Low-Noise, 4 1/2 Digit, Single-Chip ADC with Multiplexed LCD Drivers
Analog IC 模拟IC
5-Pin, Multiple-Input, Programmable Reset ICs 模拟IC
|
3M Company
Microchip Technology, Inc.
|
| K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4 |
RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58
RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| AN136 |
Using the CS5180 with Multiplexed Inputs
|
Cirrus Logic
|
| EL4422C |
Multiplexed-Input Video Amplifiers
|
Elantec Semiconductor
|
| CX20152 |
Dual 16 Bit / 88 kHz / Multiplexed D/A
|
Sony
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
