| PART |
Description |
Maker |
| ET-T1646 6B10 |
DUPLEX-DIODE TWIN TRIODE
|
General Electric Company
|
| TBB1002 |
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Hitachi Semiconductor
|
| TBB1012 TBB1012MMTL-E |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1005 TBB1005EMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1004 TBB1004DMTL-E TBB100406 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1004 |
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Hitachi Semiconductor
|
| TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| 12BH7-A |
The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers 2BH7 - A是小型中型亩troide主要是纵向，在电视接收器偏转放大器的使用而设
From old datasheet system
|
GE Security, Inc.
GE[General Semiconductor]
|
| UPA828 UPA828TF UPA828TF-T1 |
HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
|
NEC[NEC]
|
| SM12J45A SM12G45 SM12G45A SM12J45 |
BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
http://
Toshiba, Corp.
|
| 3CW20000A3 |
The 3CW20,000A3 is a medium-mu power triode
The 3CW20,000A3 is a medium-mu power triode
|
Communications & Power Industries, Inc.
|
