| PART |
Description |
Maker |
| SK100DAL100D SK100DB100D |
NPN POWER DARLUNGTON MODULES 100A 1000V 100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Power Darlington Modules
|
Semikron International
|
| VBO21-12NO7 VBO21-08NO7 VBO21-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS Corporation
|
| VUO28-08NO7 VUO28-06NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| VBE55-12NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| MDD312-12N1 L102 MDD312-18N1 MDD312-14N1 MDD312-16 |
Thyristor and Rectifiers Modules
High Power Diode Modules
CAT6A PLENUM, GREEN, SPOOBULK CABLE
|
IXYS Corporation
|
| VBE17-12NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| PM10CNJ060 |
IPMS Modules: 600V
INTELLIGENT POWER MODULES
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM100SZ-6S RM100SZ-6S/-6R RM100SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE
Fast Recovery Diode Modules, F Series (for welding)
|
Mitsubishi Electric Corporation
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
