| PART |
Description |
Maker |
| 1SS351 |
Sillicon Epitaxial Schottky Barrier Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| MCR100-D MCR100-3 |
0.8 A, 100 V, SCR, TO-226AA
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| MMBTH10 MMBTSA1037 MMBTSA1162 MMBTSA1182 1SS390 MM |
NPN Silicon VHF/UHF Transistor
PNP Silicon Epitaxial Planar Transistor
SILICON EPITAXIAL PLANAR DIODE
NPN Silicon Epitaxial Planar Transistors
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
PNP SILICON EPITAXIAL POWER TRANSISTOR
BAND SWITCHING DIODE
SILICON EPITAXIAL PLANAR SWITCHING DIODE
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
SEMTECH ELECTRONICS LTD...
|
| 1SS315 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| SSM6G18NU |
Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial
Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
| HN20S01F |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
| RB521S-30 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| RB521G-30 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1N728WS |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
