| PART |
Description |
Maker |
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APTGT300A120G |
Phase leg Fast Trench Field Stop IGBT Power Module 420 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| VUB145 VUB145-16NO1 VUB116 VUB116-16NO1 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 95 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| CM10MD1-24H CM10MD1-24 |
CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts 10 A, 1200 V, N-CHANNEL IGBT
CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,10A I(C)
|
Powerex, Inc.
Powerex Inc
POWEREX[Powerex Power Semiconductors]
|
| PM75RSD120 |
IntellimodModule Three Phase Brake IGBT Inverter Output (75 Amperes/1200 Volts) AC MOTOR CONTROLLER, 150 A, UFM19
Intellimod Module Three Phase Brake IGBT Inverter Output (75 Amperes/1200 Volts)
Intellimod⑩ Module Three Phase Brake IGBT Inverter Output (75 Amperes/1200 Volts)
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| APT25GT120BRDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| CM100DY-24H |
Dual IGBTMOD 100 Amperes/1200 Volts 100 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts 200 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
