| PART |
Description |
Maker |
| HAT1093C-EL-E HAT1095C-EL-E HAT1095C HAT1093C |
2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOSFET Power Switching
Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| 2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| RQJ0303PGDQA RQJ0303PGDQATL-E |
3300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FET 6-PIN 2 CIRCUITS
MOS Field Effect Transistor
From old datasheet system
|
NEC Corp.
|
| RQJ0201UGDQA RQJ0201UGDQATL-E |
3400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SC-59A, MPAK-3
Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc.
Renesas Electronics Corporation
|
| 2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
| RQJ0203WGDQA RQJ0203WGDQATL-E |
2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3
Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc.
Renesas Electronics Corporation
|
| HAT1020R |
Silicon P-Channel Power MOS FET(P娌?????MOSFET)
|
Hitachi,Ltd.
|
| 2SK1620 2SK1620L 2SK1620S |
Power switching MOSFET
Silicon N-Channel MOS FET
|
HITACHI[Hitachi Semiconductor]
http://
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