| PART |
Description |
Maker |
| STH5NA90FI |
3.5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
STMICROELECTRONICS
|
| STC12IE90HV C12IE90HV |
Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| SXL-208-BLK SXL-208-TR1 SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 100/TRAY.
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13
|
Stanford Microdevices
|
| TMP95FY64 E_030331_95FY64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| TMP95C061B E_030331_95C061B_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| TMP93PW40D |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP95FW54A |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
|
Toshiba
|
| 2SK1984-01MR |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| STD2NK90Z06 STD2NK90Z-1 STD2NK90ZT4 STP2NK90Z |
N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET
2.1 A, 900 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
STMicroelectronics
|
| IRFPF40 IRFPF40PBF SIHFPF40 SIHFPF40-E3 IRFPF40-20 |
4.7 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 ROHS COMPLIANT PACKAGE-3
Power MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
