| PART |
Description |
Maker |
| M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| M58LT128HSB M58LT128HSB8ZA6 M58LT128HSB8ZA6E M58LT |
128 Mbit (8 Mb ×16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| HYB39L128160AC HYB39L128160AC-75 HYB39L128160AC-8 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM
|
INFINEON[Infineon Technologies AG]
|
| HYB39L128160AT |
128-MBIT SYNCHRONOUS LOW-POWER DRAM
|
Infineon Technologies AG
|
| M58LT256JSB M58LT256JST8ZA6T M58LT256JST8ZA6E M58L |
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
| M58LT256JSB M58LT256JSB8ZA6 M58LT256JST8ZA6 M58LT2 |
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
|
STMicroelectronics
|
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
| IS75V16F128GS32 IS75V16F128GS32-7065BI |
3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
