| PART |
Description |
Maker |
| 4126L-T60-T 4126 4126-T60-T |
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 200 V, NPN, Si, POWER TRANSISTOR, TO-126
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 高频开关晶体管BALLASTERS
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| SST4403 2N4403 MMST4403 UMT4403 A5800339 |
PNP Medium Power Transistor (Switching)(PNP中等功率晶体开) 进步党中功率晶体管（开关）（民进党中等功率晶体管（开关）
From old datasheet system
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm Co., Ltd.
ROHM[Rohm]
|
| FS10ASJ-06F |
Transistors>Switching/MOSFETs
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation
|
| H7N0608AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H7N0308CF |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas
HITACHI[Hitachi Semiconductor]
|
| H5N2003P H5N2003P-E |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H7N0608LD H7N0608LM H7N0608LS |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N3011P-E H5N3011P |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| 2SC5161TLB 2SC5161 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
µP Supervisory Circuits in 4-Bump (2 x 2) Chip-Scale Package
High voltage switching transistor (400V, 2A)
|
Rohm
|
| HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
