| PART |
Description |
Maker |
| NE57811 NE57811S |
Advanced DDR memory termination power with shutdown 先进的DDR存储器终端电源与关机
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NE57810 NE57810S |
Advanced DDR memory termination power with external reference voltage in
|
NXP Semiconductors
|
| SC1480A SC1480AEVB SC1480AITSTRT |
DDR and DDR Memory VTT power Supply Controller
|
Semtech Corporation
|
| CM3121 CM312102SB CM3121-02SB CM3121-02SH |
Dual Linear Voltage Regulator for DDR-I and DDR-II Memory
|
CALMIRCO[California Micro Devices Corp]
|
| MAX1809EEE MAX1809ETI MAX1809 |
3A / 1MHz / DDR Memory Termination Supply
3A, 1MHz, DDR Memory Termination Supply 3AMHz、DDR存储器端接电
" 3A, 1MHz, DDR Memory Termination Supply"
3A 1MHz DDR Memory Termination Supply
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| BR34E02NUX-WE2 BR34E02FVT-WTR BR34E02FVT-WE2 |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| RD28F3208C3T70 RD28F3208C3B90 |
TVS BIDIRECT 400W 90V SMA
3 VOLT INTEL Advanced Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye SPECIALTY MEMORY CIRCUIT, PBGA66
|
INTEL CORP
Intel, Corp.
|
| ST1353 ST1353-BD10 ST1353-BW2 ST1353-BW4 ST1353-CD |
(ST1331/1333/1353) 6-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms
6-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 6，联系记忆卡IC 272位具有高级安全机制的EEPROM
|
??????浣?
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| 313072-002 6402 6400 |
Advanced Memory Buffer
|
Intel Corporation
|
| TE28F004B3B110 TE28F004B3B90 TE28F004B3T110 TE28F0 |
3 Volt Advanced Boot Block Flash Memory
|
INTEL[Intel Corporation]
|
| SES900 SE97 |
DDR memory module temp sensor with integrated SPD, 3.3 V
|
NXP Semiconductors
|
